Dr Saravana Kumar R - Bannari Amman Institute of Technology

Experience Type	Organization	From	To	Total Experience
Engineering	Bannari Amman Institute of Technology, Sathyamangalam	17.12.2018
Engineering	SKP ENGINEERING COLLEGE	29.06.2015	06.12.2018	3 Year(s) & 5 Month(s)
Engineering	SKP INSTITUTE OF TECHNOLOGY	04.06.2007	28.06.2015	7 Year(s) & 11 Month(s)
Engineering	SKP ENGINEERING COLLEGE	21.06.2004	28.07.2005	1 Year & 1 Month

Degree	Specialization	Institute	University	Year of Passing
B.E.	Electronics and Communication Engineering	Arunai Engineering College	Madras University, Chennai	2004
M.E	Applied Electronics	SKP Engineering College	Anna University, Chennai	2007
Ph.D	Information and Communication	Anna University Chennai	Anna University, Chennai	2018

S.No.	Subject Area
1	Nano-Scale Semiconductor devices,
2	High Electron Mobility Transistors (HEMTs) for High Power and High-Frequency Applications

Baskaran Subramanian, Mohanbabu Anandan, Saminathan Veerappan, Murugapandiyan Panneerselvam, Mohammed Wasim, Saravana Kumar Radhakrishnan, Praveen Pechimuthu, Yogesh Kumar Verma, Subash Navaneethan Vivekanandhan Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD) Journal of Electronic Materials 49 – APR 2020

P.Murugapandiyan, A.MohanbabubV,Rajya Lakshmi V,N.Ramakrishnan, ArathyVarghese, MOHDWasime, S.Baskaran,R.Saravana Kumar,V.Janakiraman Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications Journal of Science: Advanced Materials and Devices 5 2 192 – 198 JUN 2020

R Poornachandran, N Mohan Kumar, R Saravana Kumar, S Baskaran Noise analysis of double gate composite InAs based HEMTs for high frequency applications Microsystem Technologies – JUL 2020

R. Poornachandran, N. Mohankumar, R. Saravanakumar, G. Sujatha Analysis of microwave noise in an enhancement mode dual quantum well InAs HEMT Journal of Computational Electronics – JUN 2019

Poornachandran R, Mohankumar N, Saravana Kumar R, Sujatha G Sheet carrier density and I-V analysis of In0.7Ga0.3As/InAs/ In0.7Ga0.3As/InAs/In0.7Ga0.3As dual channel double gate HEMT for THz applications International Journal of Numerical Modelling 32 5 – 2019

Saravana Kumar R, Mohanbabu A, Mohankumar N Simulation of InGaAs Sub-channel DG-HEMT for analogue/RF applications International Journal of Electronics 105 446 – 456 2018

Saravana Kumar R, Baskaran S, Mohanbabu A Comparative assessment of InGaAs sub-channel and InAs composite channel Double gate (DG)-HEMTfor Sub-millimeter wave applications AEU-International Journal of Electronics and Communications 83 462 – 469 2018

Saravana Kumar R, Mohanbabu A, Mohankumar N In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel Double Gate (DG)-HEMT Devices for High-Frequency Applications Journal of Computational Electronics 16 732 – 740 2017

Mohanbabu A, Saravana Kumar R Noise Characterization of enhancement mode AlGaN graded barrier MIS-HEMTdevices Superlattices and Microstructures 112 604 – 618 2017

Saravana Kumar R,Sarathi A Characterization of single and DG InSb HEMT devices for High frequency applications International Journal of Innovative Research in Science Engineering 5 4 6319 – 6325 2016

Saravana Kumar R performance analysis of InP Based High electron mobility transistor devices in nano regime International Journal of advanced research in Electrical, Electronics and Instrumentation Engineering 3 4 8359 – 8363 2014

T. Ranjith Kumar , R.Saravana Kumar ,, “VLSI Design of Area Efficient Approximate multiplier and its applications”, International Conference ICSTEM, , , March 2020

R. Saravana Kumar, P. M. Rubesh Anand, S. Karthick, R. Nirmal Kumar, “Performance Analysis of Enhancement Mode Composite Channel MOSHEMT Device for Low Power Applications”, IEEE conference- ICACCE, , Bannari Amman Institute of Technology, April 2019

R.Saravana Kumar , R.Poorna chandran,N.Mohankumar,S.Baskaran, “DC and RF characteristics of InAs based double delta doped MOSHEMT devices”, IEEE-EDKCON, IEEE EDS society, Kolkata, November 2018

R.Poornachandran,R.Saravana kumar,Dr.N.mohankumar,S.Baskaran, “Noise characterization of InAs based DGHEMT devices for RF applications”, IEEE-EDKCON, , Kolkata, November 2018

R.Saravana Kumar , “Performance analysis of InP based HEMTdevice in nano regime”, SMART-2016, , Dr. Paul’s Engineering college, March 2016

N.poorani,R.Saravana kumar, “Performance of inSb based HEMT device for high frequency applications”, SMART, , Pauls engineering college, March 2016

R.Saravana kumar, N.Mohan kumar, “Performance analysis of high electron mobility transistors for sub millimeter wave applications”, ICRCC, , SKP engineering college, December 2012

R.Saravana Kumar , “RF performance trends of hetero junction Bipolar Transistor in the nano-regime”, ICAET-2011, , E.G.S. Pillay Engineering college, May 2011

R.Saravana Kumar, S.Baskaran, “High performance carry select adder”, NCVWC, , Arunai Engineering college, February 2011

R.Saravana Kumar, “DC and RF characteristics improvement in HBT for low power applications”, IEEE EDS mini colloquia, , SKP Engineering college, November 2009

R.Saravana Kumar , “Characterization of InGaAs and InAs based High electron Mobility transistor”, ICACI-2009, , Thanthai Periyar Government Institute of Technology, January 2009

R.Saravana Kumar, “Efficient VHDL implementation of DWT for image compression”, TRENZ, , TPGIT, April 2007

R.Saravana Kumar, P.Siva Kumar, “Efficient VHDL implementation for image compression using Daubechies wavelet transform”, Recent trends in VLSI,Signal Processing, Communication and Embedded technology, , R.V.S. College of Engineering , April 2007

R.Saravana Kumar,P.Siva kumar, “Efficient implementation and comparison of DCT and wavelet transform for image compression”, EMET, , oxford engineering college, April 2007

S.No.	Name of the Scholar	Register Number	Date of Reg.	Title of the Ph.D Thesis / Tentative title of the Research	Status
1	Dr. Shri Tharanyaa J P	1523369814	November 2019	CERTAIN INVESTIGATIONS ON THE ENDURANCE ENHANCEMENT OF NON- VOLATILE MEMORY IN EMBEDDED SYSTEMS USING OPTIMIZED LEARNING ALGORITHM AND COMPRESSION TECHNIQUE	Completed on November 2022
2	Lino L	21244691114	February 2021	DESIGN AND PERFORMANCE ANALYsIs OF DOUBLE GATE ALGAN/GAN HEMT	Pursuing
3	Tamilselvan S	21144691212	January 2022	ENHANCING HEALTH MONITORING SYSTEM USING INTERNET OF THINGS	Pursuing
4	Praneeth T K K	20154691210	May 2022	MULTIPLE TARGET DETECTION IN IMAGE	Pursuing

S.No.	Achievements
1	Received Best paper Award in 5th IEEE international conference on ICACCE 2019 held during 4-6 April 2019